Optimization of image-based aberration metrology for EUV lithography
Author:
Affiliation:
1. Rochester Institute of Technology (United States)
Publisher
SPIE
Reference20 articles.
1. Understanding lens aberration and influences to lithographic imaging
2. Variations to the influence of lens aberration invoked with PSM and OAI
3. S. Bajt, “Optics Contamination,” in [EUV Lithography], V. Bakshi, Ed., 1000 20th Street, Bellingham, WA 98227-0010 USA: SPIE, 2008.
4. Effects of radiation-induced carbon contamination on the performance of an EUV lithographic optic
5. Description des procedees employes pour reconnaitre la configuration des surfaces optiques;Foucault,1858
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. E-beam metrology-based EUVL aberration monitoring;Metrology, Inspection, and Process Control XXXVI;2022-05-26
2. Measurement of EUV lithography pupil amplitude and phase variation via image-based methodology;Journal of Micro/Nanolithography, MEMS, and MOEMS;2016-06-28
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