Measurement of EUV lithography pupil amplitude and phase variation via image-based methodology

Author:

Levinson Zachary1,Verduijn Erik2,Wood Obert R.2,Mangat Pawitter2,Goldberg Kenneth A.3,Benk Markus P.3,Wojdyla Antoine3,Smith Bruce W.1

Affiliation:

1. Rochester Institute of Technology, 168 Lomb Memorial Drive, Rochester, New York 14623, United States

2. GLOBALFOUNDRIES, 400 Stone Break Road Extension, Malta, New York 12020, United States

3. Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, California 94720, United States

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Extreme ultraviolet microscope characterization using photomask surface roughness;Scientific Reports;2020-07-15

2. Rapid image-based pupil plane characterization for EUV lithography systems;International Conference on Extreme Ultraviolet Lithography 2018;2018-10-09

3. Image-based pupil plane characterization via a space-domain basis;Journal of Micro/Nanolithography, MEMS, and MOEMS;2017-06-19

4. Image-based pupil plane characterization for anamorphic lithography systems;SPIE Proceedings;2017-03-24

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