Metal oxide resist (MOR) EUV lithography processes for DRAM application-Reference-Cited by-同舟云学术

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Metal oxide resist (MOR) EUV lithography processes for DRAM application

Published:2022-05-25 Issue: Volume: Page:
ISSN:
Container-title:Advances in Patterning Materials and Processes XXXIX
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Author:

Kawakami Shinichiro,Onitsuka Tomoya,Kamei Yuya,Shimura Satoru,Park Chan Ha,Lee Sangho,Lee Hong Goo,Seo Jae Wook,Kim Jin il,Roh Jun ho,Kim Jin Hyung,Lee Ki Lyoung,Nagahara Seiji,Kim Jeoung Yun,Kim Jang Hwan,Park Jong Eun

Publisher

SPIE

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Cl₂ Radical on Dry Development of Spin-Coated Metal Oxide Resist;ACS Applied Materials & Interfaces;2024-09-12

2. High throughput observation of latent images on resist using laser-based photoemission electron microscopy;Applied Physics Express;2024-08-01

3. Hard failure prediction of ADI pattern using optical parameters and machine learning;Optical and EUV Nanolithography XXXVII;2024-04-10

4. Development of high contrast EUV photoresist for narrow pitch C/H patterning;Advances in Patterning Materials and Processes XLI;2024-04-09

5. Organic dry development rinse (O-DDR) process for spin-on MOR to prevent pattern collapse;Advances in Patterning Materials and Processes XLI;2024-04-09

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