Defect detection strategies and process partitioning for single-expose EUV patterning
Author:
Affiliation:
1. IBM Semiconductor Research, Albany, New York
2. Tokyo Electron Limited, Technology Center America, LLC, Albany, New York
3. Tokyo Electron Kyushu Limited, Kumamoto
4. KLA-Tencor at Albany Nanotech, Albany, New York
Publisher
SPIE-Intl Soc Optical Eng
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Resist fundamentals for resolution, LER, and sensitivity (RLS) performance tradeoffs and their relation to micro-bridging defects
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3. Lithographic stochastics: beyond 3σ
4. Study of alternate hardmasks for extreme ultraviolet patterning
5. Stochastic effects in EUV lithography: random, local CD variability, and printing failures
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3. A holistic characterization methodology for stochastic printing failures in EUV contact holes;2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2021-05-10
4. Fundamental characterization of stochastic variation for improved single-expose extreme ultraviolet patterning at aggressive pitch;Journal of Micro/Nanolithography, MEMS, and MOEMS;2020-07-01
5. Patterning Material Challenges for Improving EUV Stochastics;Journal of Photopolymer Science and Technology;2019-06-24
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