Co-optimization of lithographic and patterning processes for improved EPE performance-Reference-Cited by-同舟云学术

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Co-optimization of lithographic and patterning processes for improved EPE performance

Published:2017-03-21 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Maslow Mark J.¹,Timoshkov Vadim¹,Kiers Ton¹,Jee Tae Kwon¹,de Loijer Peter¹,Morikita Shinya²,Demand Marc²,Metz Andrew W.²,Okada Soichiro²,Kumar Kaushik A.²,Biesemans Serge²,Yaegashi Hidetami²,Di Lorenzo Paolo³,Bekaert Joost P.³,Mao Ming³,Beral Christophe³,Larivière Stephane³

Affiliation:

1. ASML Netherlands B.V. (Netherlands)

2. Tokyo Electron Ltd. (Japan)

3. IMEC (Belgium)

Publisher

SPIE

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cascade and cluster of correlated reactions as causes of stochastic defects in extreme ultraviolet lithography;Journal of Micro/Nanolithography, MEMS, and MOEMS;2020-05-12

2. Measurement of pattern roughness and local size variation using CD-SEM;Journal of Micro/Nanolithography, MEMS, and MOEMS;2018-07-23

3. Self-aligned block and fully self-aligned via for iN5 metal 2 self-aligned quadruple patterning;Extreme Ultraviolet (EUV) Lithography IX;2018-03-19

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