Self-aligned block and fully self-aligned via for iN5 metal 2 self-aligned quadruple patterning-Reference-Cited by-同舟云学术

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Self-aligned block and fully self-aligned via for iN5 metal 2 self-aligned quadruple patterning

Published:2018-03-19 Issue: Volume: Page:
ISSN:
Container-title:Extreme Ultraviolet (EUV) Lithography IX
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Author:

Juncker Aurelie,Clark William,Vincent Benjamin,Franke Joern-Holger,Halder Sandip,Lazzarino Frederic,Murdoch Gayle

Publisher

SPIE

Reference8 articles.

1. Self-Aligned Block technology: a step toward further scaling;Lazzarino,2017

2. Feasibility study of fully self-aligned Vias for 5nm node BEOL;Murdoch,2017

3. Low-k interconnect stack with a novel self-aligned via patterning process for 32nm high volume manufacturing;Brain,2009

4. Design and pitch scaling for affordable node transition and EUV insertion scenario;Kim,2017

5. SAQP & EUV block patterning of BEOL metal layers on imec's iN7 platform;Bekaert,2017

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1. Galactose-Based Block Copolymers with Switchable χ Parameters for Tuning Phase Separated Morphology;Macromolecules;2023-03-22

2. Area-Selective Deposition of AlO_x and Al-Silicate for Fully Self-Aligned Via Integration;ACS Applied Materials & Interfaces;2023-01-17

3. Selective Pulsed Chemical Vapor Deposition of Water-Free TiO₂/Al₂O₃ and HfO₂/Al₂O₃ Nanolaminates on Si and SiO₂ in Preference to SiCOH;ACS Applied Materials & Interfaces;2022-03-22

4. Insight into the removal and reapplication of small inhibitor molecules during area-selective atomic layer deposition of SiO2;Journal of Vacuum Science & Technology A;2021-01

5. Role of high aspect-ratio thin-film metal deposition in Cu back-end-of-line technology;Journal of Vacuum Science & Technology A;2020-09

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