Wide-range directed self-assembly lithography enabling wider range of applicable pattern size for both hexagonal multi-hole and line/space-Reference-Cited by-同舟云学术

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Wide-range directed self-assembly lithography enabling wider range of applicable pattern size for both hexagonal multi-hole and line/space

Published:2017-03-28 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Morita Seiji¹,Saito Ryuichi¹,Yamamoto Ryosuke¹,Sasao Norikatsu¹,Sawabe Tomoaki¹,Asakawa Koji¹,Sugimura Shinobu¹

Affiliation:

1. Toshiba Corp. (Japan)

Publisher

SPIE

Reference4 articles.

1. S. Morita, Optical Data Storage 2003 Postdeadline paper WC3, p9–11(2003)

2. S. Morita et al, Proc. of SPIE Vol. 9777 97770K (2016)

3. S. Morita, Next Generation Lithography Work Shop 2013 (2013)

4. A. Singh et al, Proc. of SPIE Vol. 9425 94250N (2015)

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An embedded neutral layer for advanced surface affinity control in grapho-epitaxy directed self-assembly;Nanoscale;2018

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