Group III-nitride alloys as photovoltaic materials-Reference-Cited by-同舟云学术

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Group III-nitride alloys as photovoltaic materials

Published:2004-10-20 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Ager III Joel W.,Wu Junqiao,Yu Kin M.,Jones R. E.,Li S. X.,Walukiewicz Wladek,Haller Eugene E.,Lu Hai,Schaff William J.

Publisher

SPIE

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bandgap engineering of indium gallium nitride layers grown by plasma-enhanced chemical vapor deposition;Journal of Vacuum Science & Technology A;2022-12

2. Effect of light wavelengths on the non-polar InGaN-based thin film solar cells performances using one-dimensional modeling;Journal of Science: Advanced Materials and Devices;2019-12

3. InGaN/Si Hetero-Junction Tandem Solar Cell with Self Tunneling Effect: Proposal & Analysis;2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS);2019-04

4. Mechanism of Carrier Transport in Hybrid GaN/AlN/Si Solar Cells;Journal of Electronic Materials;2017-05-11

5. Assessment of factors limiting conversion efficiency of single-junction III-nitride solar cells;physica status solidi (c);2014-01-22

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