Future mask writers requirements for the sub-10nm node era-Reference-Cited by-同舟云学术

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Future mask writers requirements for the sub-10nm node era

Published:2012-11-08 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Chandramouli Mahesh¹,Abboud Frank¹,Wilcox Nathan¹,Sowers Andrew¹,Cole Damon¹

Affiliation:

1. Intel Corp. (United States)

Publisher

SPIE

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Curvilinear mask handling in OPC flow;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-11-24

2. Multibeam mask requirements for advanced EUV patterning;Photomask Technology 2022;2022-12-01

3. Multi-beam mask writer MBM-2000PLUS;Novel Patterning Technologies 2022;2022-05-25

4. How utilizing curvilinear design enables better manufacturing process window;Design-Process-Technology Co-optimization for Manufacturability XIV;2020-03-23

5. Contribution ratio of process fidelity and beam accuracy in multi-beam mask writing;Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020;2020-03-23

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