Investigation of degraded efficiency in blue InGaN multiple-quantum well light-emitting diodes
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SPIE
Reference55 articles.
1. Origin of efficiency droop in GaN-based light-emitting diodes
2. Defect related issues in the “current roll-off” in InGaN based light emitting diodes
3. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
4. Auger recombination in InGaN measured by photoluminescence
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