Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctions-Reference-Cited by-同舟云学术

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Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctions

Published:2017-07-11 Issue:16 Volume:25 Page:A777
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Kuo Yen-Kuang,Shih Ya-Hsuan,Chang Jih-Yuan,Lai Wei-Chih,Liu Heng,Chen Fang-Ming,Lee Ming-Lun,Sheu Jinn-Kong

Funder

Ministry of Science and Technology, Taiwan (MOST)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference19 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

3. Efficiency droop in nitride-based light-emitting diodes

4. Investigation of degraded efficiency in blue InGaN multiple-quantum well light-emitting diodes

5. Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN-based tunnel junctions and optoelectronic devices grown by metal-organic vapor-phase epitaxy;Semiconductor Science and Technology;2021-04-30

2. Metalorganic chemical vapor deposition-grown tunnel junctions for low forward voltage InGaN light-emitting diodes: epitaxy optimization and light extraction simulation;Semiconductor Science and Technology;2021-02-17

3. Light-emitting diodes with AlN polarization-induced buried tunnel junctions: A second look;Applied Physics Letters;2020-08-10

4. Blue (In,Ga)N light-emitting diodes with buried n +–p + tunnel junctions by plasma-assisted molecular beam epitaxy;Japanese Journal of Applied Physics;2019-05-31

5. Monolithic high performance InGaN/GaN white LEDs with a tunnel junction cascaded yellow and blue light-emitting structures;Optical Materials;2018-03

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