Image-blur tolerances for 65-nm and 45-nm node IC manufacturing

Author:

Lalovic Ivan,Kroyan Armen,Kye Jongwook,Liu Hua-Yu,Levinson Harry J.

Publisher

SPIE

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Measurement of image fading impact on 20P40 contact hole LCDU;International Conference on Extreme Ultraviolet Lithography 2023;2023-11-28

2. Image contrast metrology for EUV lithography;International Conference on Extreme Ultraviolet Lithography 2022;2022-12-01

3. Characterization of EUV image fading induced by overlay corrections using pattern shift response metrology;International Conference on Extreme Ultraviolet Lithography 2019;2019-10-03

4. Laser bandwidth and other sources of focus blur in lithography;Journal of Micro/Nanolithography, MEMS, and MOEMS;2006-10-01

5. Estimating resist parameters in optical lithography using the extended Nijboer-Zernike theory;Journal of Micro/Nanolithography, MEMS, and MOEMS;2006-01-01

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