Characterization of EUV image fading induced by overlay corrections using pattern shift response metrology-Reference-Cited by-同舟云学术

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Characterization of EUV image fading induced by overlay corrections using pattern shift response metrology

Published:2019-10-03 Issue: Volume: Page:
ISSN:
Container-title:International Conference on Extreme Ultraviolet Lithography 2019
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Author:

Schmidt Daniel,Cornell Roger,Kling Michael E.,Gabor Allen,Ausschnitt Christopher

Publisher

SPIE

Reference13 articles.

1. Dynamic performance of DUV step-and-scan systems and process latitude;Klaassen,2000

2. Impact of synchronization errors on overlay and CD control;Luce,2002

3. Image-blur tolerances for 65-nm and 45-nm node IC manufacturing;Lalovic,2003

4. Line-edge roughness performance targets for EUV lithography;Brunner,2017

5. Advanced combined overlay and CD uniformity measurement mark for double patterning;Hsu,2018

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1. Understanding and measuring EUV mask 3D effects;Optical and EUV Nanolithography XXXVII;2024-04-10

2. Measurement of image fading impact on 20P40 contact hole LCDU;International Conference on Extreme Ultraviolet Lithography 2023;2023-11-28

3. Reduced lifetime of EUV pellicles due to defects;Journal of Micro/Nanopatterning, Materials, and Metrology;2021-08-02

4. Thermomechanical stability evaluation of various pellicle structures with contaminant particles;Japanese Journal of Applied Physics;2021-03-08

5. Novel monitoring of EUV litho cluster for manufacturing insertion;Extreme Ultraviolet (EUV) Lithography XI;2020-03-23

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