Author:
Xie Lingbo,Tian Ye,Wu Wenxing,Zhou Gang,Guo Shuangpeng
Reference6 articles.
1. Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials
2. Effects of process parameter variations on the removal rate in chemical mechanical polishing of 4H-SiC
3. Subsurface Atomic Structure of 4H-SiC (0001) Finished by Plasma-Assisted Polishing;Hui,2013
4. Progress Update in Magnetorheological Finishing
5. A Novel Superfine Machining Technology Based on the Magnetorheological Effect of Abrasive Slurry”, Materials Science Forum;Lu,2006