Radiation-induced dark current increase in CMOS active pixel sensors-Reference-Cited by-同舟云学术

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Radiation-induced dark current increase in CMOS active pixel sensors

Published:2000-10-26 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Bogaert Jan,Dierickx Bart,Van Hoof Chris A.

Publisher

SPIE

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research on the degradation of resolution in cameras based on CMOS image sensor under γ- and X-rays irradiation;Radiation Effects and Defects in Solids;2024-08-19

2. Effects of gamma radiation on the performance of star sensors for star map recognition;Radiation Physics and Chemistry;2023-02

3. Heavy Ion Irradiation Induced Single Particle Displacement Damage in 8T Global Shutter CMOS Image Sensor;Journal of Physics: Conference Series;2021-03-01

4. Displacement Damage Effects in Backside Illuminated CMOS Image Sensors;IEEE Transactions on Electron Devices;2021

5. Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors;Optics Express;2016-02-19

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