Research on optimal process parameters in thermally oxidation-assisted polishing of reaction-sintered silicon carbide-Reference-Cited by-同舟云学术

Research on optimal process parameters in thermally oxidation-assisted polishing of reaction-sintered silicon carbide

Published:2016-10-28 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Shen Xinmin¹,Yamamura Kazuya²,Zhang Xiaonan¹,Zhang Xiangpo¹,Wang Dong¹,Peng Kang¹

Affiliation:

1. The PLA Univ. of Science and Technology (China)

2. Osaka Univ. (Japan)

Publisher

SPIE

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5. Fully active telescope;Ealey,2004

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