Difference in EUV photoresist design towards reduction of LWR and LCDU
Author:
Affiliation:
1. IMEC (Belgium)
Publisher
SPIE
Reference12 articles.
1. New Polymer Design by DLS Analysis of Development Defect Detection
2. Shot noise, ler, and quantum efficiency of euv photoresists;Brainard,2004
3. Impact of acid diffusion length on resist ler and lwr measured by cd-afm and cd-sem;Fouche,2007
4. Alternative developer solutions for extreme ultraviolet resist
5. Surface roughness development during photoresist dissolution
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