High order field-to-field corrections for imaging and overlay to achieve sub 20-nm lithography requirements

Author:

Mulkens Jan,Kubis Michael,Hinnen Paul,de Graaf Roelof,van der Laan Hans,Padiy Alexander,Menchtchikov Boris

Publisher

SPIE

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Direct correlation between mask registration and on-wafer measurements for individual logic device features;Photomask Technology 2022;2022-12-01

2. The mask contribution as part of the intra-field on-product overlay performance;Photomask Technology 2020;2020-10-12

3. On-product focus monitoring and control for immersion lithography in 3D-NAND manufacturing;Metrology, Inspection, and Process Control for Microlithography XXXIV;2020-03-20

4. Hybrid Overlay Modeling for Field-by-Field Error Correction in the Photolithography Process;IEEE Transactions on Semiconductor Manufacturing;2020-02

5. The impact of the reticle and wafer alignment mark placement accuracy on the intra-field mask-to-mask overlay;Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology;2019-06-27

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