<title>Effects of absorber topography and multilayer coating defects on reflective masks for soft x-ray/EUV projection lithography

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Effects of absorber topography and multilayer coating defects on reflective masks for soft x-ray/EUV projection lithography

Published:1993-06-24 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III
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Author:

Nguyen Khanh B.,Wong Alfred K. K.,Neureuther Andrew R.,Attwood, Jr. David T.

Publisher

SPIE

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Attenuated phase shift masks: a wild card resolution enhancement for extreme ultraviolet lithography?;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-05-11

2. Investigation of waveguide modes in EUV mask absorbers;Journal of Micro/Nanopatterning, Materials, and Metrology;2021-05-20

3. Attenuated phase shift mask for extreme ultraviolet: can they mitigate three-dimensional mask effects?;Journal of Micro/Nanolithography, MEMS, and MOEMS;2018-08-11

4. Attenuated PSM for EUV: Can they mitigate 3D mask effects?;Extreme Ultraviolet (EUV) Lithography IX;2018-03-19

5. Advanced EUV mask and imaging modeling;Journal of Micro/Nanolithography, MEMS, and MOEMS;2017-08-19

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