EUV insertion strategy into logic technology on the horizon of scaling paradigm change-Reference-Cited by-同舟云学术

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EUV insertion strategy into logic technology on the horizon of scaling paradigm change

Published:2019-03-14 Issue: Volume: Page:
ISSN:
Container-title:Extreme Ultraviolet (EUV) Lithography X
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Author:

Kim Ryoung-Han R.

Publisher

SPIE

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Update on main chain scission resists in Zeon for high-NA EUV lithography;International Conference on Extreme Ultraviolet Lithography 2023;2023-11-21

2. Development on main chain scission resists for high-NA EUV lithography;Advances in Patterning Materials and Processes XL;2023-05-01

3. Stochastic defect generation depending on tetraalkylhydroxide aqueous developers in extreme ultraviolet lithography;Japanese Journal of Applied Physics;2023-01-01

4. Improve resolution with main chain scission resists for EUV lithography;Advances in Patterning Materials and Processes XXXIX;2022-05-25

5. A novel main chain scission type photoresists for EUV lithography;Extreme Ultraviolet Lithography 2020;2020-10-13

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