Application of aberration corrected low voltage SEM for metrology-Reference-Cited by-同舟云学术

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Application of aberration corrected low voltage SEM for metrology

Published:2019-04-11 Issue: Volume: Page:
ISSN:
Container-title:Metrology, Inspection, and Process Control for Microlithography XXXIII
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Author:

Cheng Zhaohui,Dohi Hideto,Hayashi Shingo,Hirose Kotoko,Kazumi Hideyuki

Publisher

SPIE

Reference11 articles.

1. 193nm CD shrinkage under SEM: modeling the mechanism;Habermas,2002

2. Low Impact Resist Metrology: The use of ultra low voltage for high accuracy performance;Sundaram,2004

3. Characterization of CD-SEM Metrology for iArF Photoresist Materials;Bunday,2008

4. Phenomenology of electron-beam induced photoresist shrinkage trends;Bunday,2009

5. Electron-beam induced photoresist shrinkage influence on 2-D profiles;Bunday,2011

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Large-field and high-resolution low-voltage scanning electron microscopy with correction of beam-image-shift-induced chromatic deflection aberration;Journal of Vacuum Science & Technology B;2024-08-30

2. Observing secondary-electron yield and charging in an insulating material by ultralow-voltage scanning electron microscope;Journal of Vacuum Science & Technology B;2022-01

3. Electron microscopy in semiconductor inspection;Measurement Science and Technology;2021-03-25

4. Cascade and cluster of correlated reactions as causes of stochastic defects in extreme ultraviolet lithography;Journal of Micro/Nanolithography, MEMS, and MOEMS;2020-05-12

5. CD metrology for EUV resist using high-voltage CD-SEM: shrinkage, image sharpness, repeatability, and line edge roughness;Journal of Micro/Nanolithography, MEMS, and MOEMS;2019-09-18

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