1. SPIE Advanced Lithography 2020, “High speed roughness measurement on blank silicon wafers using wave front phase imaging”, Trujillo-Sevilla, J. M., Rodríguez-Ramos, J. M., Gaudestad, J. San Jose, CA, USA, Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 113252W (20 March 2020)
2. Role Of Process-induced Wafer Geometry Changes In Advanced Semiconductor Manufacturing;Turner,2014
3. SPIE Advanced Lithography Conference 2017, “Wafer-shape based in-plane distortion predictions using superfast 4G metrology”, February 2017, San Jose, CA, USA, Leon van Dijk, Jeffrey Mileham, Ilja Malakhovsky, David Laidler, Harold Dekkers,
4. Stria measurement using wave front phase imaging on an artificial plate
5. Transport Intensity Equation (TIE) explained: https://en.wikipedia.org/wiki/Transport-of-intensity_equation