Study of Aluminum-doped zinc oxide current spreading layer on P-side up thin-film AlGaInP-based light-emitting diodes by ALD-Reference-Cited by-同舟云学术

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Study of Aluminum-doped zinc oxide current spreading layer on P-side up thin-film AlGaInP-based light-emitting diodes by ALD

Published:2015-03-09 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Tseng Ming-Chun,Chen Chi-Lu,Lai Nan-Kai,Wuu Dong-Sing,Lee Hsin-Ying,Lin Yu-Chang,Horng Ray-Hua

Publisher

SPIE

Reference17 articles.

1. High-Efficiency 1-mm$^{2}$ AlGaInP LEDs Sandwiched by ITO Omni-Directional Reflector and Current-Spreading Layer

2. P-side up AlGaInP-based light emitting diodes with dot-patterned GaAs contact layers

3. Increasing the Extraction Efficiency of AlGaInP LEDs via n-Side Surface Roughening”, IEEE Photon.Technol. Lett.;Lee,2005

4. Enhanced light extraction efficiency from AlGaInP thin-film light-emitting diodes with photonic crystals

5. High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Zinc oxide-based current spreading layer behavior on the performance of P-side-up thin-film red light emitting diodes;Applied Surface Science;2018-02

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