Stochastic defect criticality prediction enabled by physical stochastic modeling and massive metrology-Reference-Cited by-同舟云学术

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Stochastic defect criticality prediction enabled by physical stochastic modeling and massive metrology

Published:2021-02-22 Issue: Volume: Page:
ISSN:
Container-title:Extreme Ultraviolet (EUV) Lithography XII
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Author:

Wang ChangAn,Cao Peigen,Delorme Maxence,Wuu Jen-Yi,Fu Jiyou,Wang Fuming,Lin Bob,Zhao Yiqiong,Peng Yi-Hsing,Fan Yongfa,Feng Mu,Cheng Bin,Wang Jen-Shiang,Simmoms Mark,Hunsche Stefan,Patterson Oliver,Pao Kevin,Elmalk Abdalmohsen,Gao Kevin,Fei Ruochong,Zeng Xuefeng,Zhang Xiaolong

Publisher

SPIE

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Aerial image metrology (AIMS) based mask-model accuracy improvement for computational lithography;Photomask Technology 2022;2022-12-01

2. The unfolding road from dust to trust;Advances in 3OM: Opto-Mechatronics, Opto-Mechanics, and Optical Metrology;2022-05-06

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