p-Type thin film field effect transistors based on lithium-doped nickel oxide channels grown by pulsed laser deposition-Reference-Cited by-同舟云学术

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p-Type thin film field effect transistors based on lithium-doped nickel oxide channels grown by pulsed laser deposition

Published:2019-03-12 Issue: Volume: Page:
ISSN:
Container-title:Oxide-based Materials and Devices X
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Author:

Sandana Vinod E.,Razeghi Manijeh,McClintock R.,Rogers D. J.,Teherani F. H.,Bove P.

Publisher

SPIE

Reference16 articles.

1. ZnO field-effect transistor;Boesen,1968

2. Thin Film Transistor of ZnO Fabricated by Chemical Solution Deposition;Ohya;Jpn. J. Appl. Phys.,2001

3. ZnO: From Transparent Conducting Oxide to Transparent Electronics;Rogers,2010

4. Metal oxide semiconductor thin-film transistors for flexible electronics

5. Transparent conducting p-type NiO thin films prepared by magnetron sputtering;Sato;Thin Solid Films,1993

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1. Effect of Li doping on the structural, linear and nonlinear optical properties of NiO thin films;Ferroelectrics;2022-10-26

2. Rapid fabrication of NiO/porous Si film for ultra-violate photodetector: The effect of laser energy;Microelectronic Engineering;2022-04

3. Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications;InfoMat;2020-08-06

4. An effect of Fe on physical properties of nanostructured NiO thin films for nonlinear optoelectronic applications;Applied Physics A;2020-01-21

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