Positive bilayer resists for 248- and 193-nm lithography-Reference-Cited by-同舟云学术

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Positive bilayer resists for 248- and 193-nm lithography

Published:1998-06-29 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Sooriyakumaran Ratnam,Wallraff Gregory M.,Larson Carl E.,Fenzel-Alexander Debra,Di Pietro Richard A.,Opitz Juliann,Hofer Donald C.,LaTulip, Jr. Douglas C.,Simons John P.,Petrillo Karen E.,Babich Katherina,Angelopoulos Marie,Lin Qinghuang,Katnani Ahmad D.

Publisher

SPIE

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A silicon-containing resist for immersion lithography;SPIE Proceedings;2010-03-11

2. Materials Choices for Sub-45nm Lithography: Immersion Characteristics of Silicon-Based Bilayer Resist;Journal of Photopolymer Science and Technology;2007

3. ArF excimer laser resists based on fluoroalcohol;Polymers for Advanced Technologies;2006

4. Silsesquioxane-based 193 nm bilayer resists: characterization and lithographic evaluation;SPIE Proceedings;2005-05-04

5. Chemical Amplification Resists for Microlithography;Microlithography · Molecular Imprinting;2005-02-03

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