Interfacet migration and defect formation in heteroepitaxy on patterned substrates: AlGaAs and InGaAs on GaAs (100) in MBE-Reference-Cited by-同舟云学术

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Interfacet migration and defect formation in heteroepitaxy on patterned substrates: AlGaAs and InGaAs on GaAs (100) in MBE

Published:1990-10-01 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Guha Supratik¹,Madhukar Anupam¹,Chen Li-ping¹,Rajkumar K. C.¹,Kapre Ravindra M.¹

Affiliation:

1. Univ. of Southern California (USA)

Publisher

SPIE

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optically active three‐dimensionally confined structures realized via molecular beam epitaxical growth on nonplanar GaAs (111)B;Applied Physics Letters;1993-11-22

2. Insituapproach to realization of three‐dimensionally confined structures via substrate encoded size reducing epitaxy on nonplanar patterned substrates;Applied Physics Letters;1993-03-29

3. Structural quality and the growth mode in epitaxial ZnSe/GaAs(100);Journal of Applied Physics;1993-03

4. Growth mode and dislocation distribution in the ZnSe/GaAs (100) system;Applied Physics Letters;1992-06-29

5. In-Situ Growth of Three-Dimensionally Confined Structures on Patterned GaAs (111)B Substrates;MRS Proceedings;1992

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