Insituapproach to realization of three‐dimensionally confined structures via substrate encoded size reducing epitaxy on nonplanar patterned substrates-Reference-Cited by-同舟云学术

Insituapproach to realization of three‐dimensionally confined structures via substrate encoded size reducing epitaxy on nonplanar patterned substrates

Published:1993-03-29 Issue:13 Volume:62 Page:1547-1549
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Madhukar A.,Rajkumar K. C.,Chen P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.108636

Reference12 articles.

1. Application of selective epitaxy to fabrication of nanometer scale wire and dot structures

2. Application of selective epitaxy to fabrication of nanometer scale wire and dot structures

3. Stimulated emission in semiconductor quantum wire heterostructures

4. Interfacet migration and defect formation in heteroepitaxy on patterned substrates: AlGaAs and InGaAs on GaAs (100) in MBE

5. Nanofeatures on GaAs (111)B via photolithography

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