Sensitivity enhancement of chemically amplified resists and performance study using extreme ultraviolet interference lithography-Reference-Cited by-同舟云学术

Sensitivity enhancement of chemically amplified resists and performance study using extreme ultraviolet interference lithography

Published:2016-07-15 Issue:3 Volume:15 Page:033502
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Buitrago Elizabeth¹,Nagahara Seiji²,Yildirim Oktay³,Nakagawa Hisashi⁴,Tagawa Seiichi⁵,Meeuwissen Marieke³,Nagai Tomoki⁴,Naruoka Takehiko⁴,Verspaget Coen³,Hoefnagels Rik³,Rispens Gijsbert³,Shiraishi Gosuke⁶,Terashita Yuichi⁶,Minekawa Yukie⁶,Yoshihara Kosuke⁶,Oshima Akihiro⁵,Vockenhuber Michaela¹,Ekinci Yasin¹

Affiliation:

1. Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland

2. Tokyo Electron Ltd., Asaka Biz Tower, Tokyo 107-6325, Japan

3. ASML Netherlands B.V., De Run 6501, 5504 DR Veldhoven, The Netherlands

4. JSR Corporation, Semiconductor Materials Laboratory, Fine Electronic Research Laboratories, 100 Kawajiri-cho, Yokkaichi, Mie, 510-8552, Japan

5. Osaka University, Graduate School of Engineering, F154 Sanken, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, JapanfOsaka University, Institute of Scientific and Industrial Research, F154 Sanken, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

6. Tokyo Electron Kyushu Ltd., 1-1, Fukuhara, Koshi-shi, Kumamoto 861-1116, Japan

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Cost-effective shrink with holistic lithography, extended by EUV;van den Brink,2015

2. The road towards single digit nanometer resolution patterning in mass production: State-of-the-art EUV resists platforms compared;Buitrago,2015

3. Organic hard masks utilizing fullerene derivatives

4. Super High Sensitivity Enhancement by Photo-Sensitized Chemically Amplified Resist (PS-CAR) Process

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