Rigorous assessment of patterning solution of metal layer in 7 nm technology node-Reference-Cited by-同舟云学术

Rigorous assessment of patterning solution of metal layer in 7 nm technology node

Published:2016-02-19 Issue:1 Volume:15 Page:013505
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Gao Weimin¹,Ciofi Ivan²,Saad Yves³,Matagne Philippe²,Bachmann Michael⁴,Gillijns Werner²,Lucas Kevin⁵,Demmerle Wolfgang⁴,Schmoeller Thomas⁴

Affiliation:

1. Synopsys Inc., Technologielaan 11-0002B-3001 Leuven, BelgiumbImec, Kapeldreef 75, B-3001 Leuven, Belgium

2. Imec, Kapeldreef 75, B-3001 Leuven, Belgium

3. Synopsys LLC, Thurgauerstrasse 40, Airgate BuildingCH-8050 Zurich, Switzerland

4. Synopsys GmbH, Karl-Hammerschmidt-Str. 34, 85609 Munich, Germany

5. Synopsys Inc., 1301 South Mopac Expressway, Austin, Texas 78746, United States

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Manufacturing Challenges in Double Patterning Lithography

2. Metrology challenges of double exposure and double patterning

3. Pitch doubling through dual-patterning lithography challenges in integration and litho budgets

4. Double patterning for 32nm and below: an update

5. Toward 3nm overlay and critical dimension uniformity: an integrated error budget for double patterning lithography

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