Phenomenology of electron-beam-induced photoresist shrinkage trends

Author:

Bunday Benjamin,Cordes Aaron,Allgair John,Tileli Vasiliki,Avitan Yohanan,Peltinov Ram,Bar-zvi Maayan,Adan Ofer,Cottrell Eric,Hand Sean

Publisher

SPIE

Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Solutions to Calibration Errors of OPC Models for Special Pattern Below 40 NM Nodes*;2023 International Workshop on Advanced Patterning Solutions (IWAPS);2023-10-26

2. Observing secondary-electron yield and charging in an insulating material by ultralow-voltage scanning electron microscope;Journal of Vacuum Science & Technology B;2022-01

3. CD metrology for EUV resist using high-voltage CD-SEM: shrinkage, image sharpness, repeatability, and line edge roughness;Journal of Micro/Nanolithography, MEMS, and MOEMS;2019-09-18

4. Application of aberration corrected low voltage SEM for metrology;Metrology, Inspection, and Process Control for Microlithography XXXIII;2019-04-11

5. What is prevalent CD-SEM's role in EUV era?;Metrology, Inspection, and Process Control for Microlithography XXXIII;2019-03-29

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