PECVD deposition and characterization of silicon oxynitride for optical applications-Reference-Cited by-同舟云学术

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PECVD deposition and characterization of silicon oxynitride for optical applications

Published:2011-05-04 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Integrated Photonics: Materials, Devices, and Applications
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Author:

Alamin Dow Ali B.,Leong Keith,Gougam Adel B.,Alizadeh Hossein,Kherani Nazir P.

Publisher

SPIE

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tunable emission from Eu:SiO_xN_y thin films prepared by integrated magnetron sputtering and plasma enhanced chemical vapor deposition;Journal of Vacuum Science & Technology A;2022-07

2. Impact of N₂O Plasma Reactant on PEALD-SiO₂ Insulator for Remarkably Reliable ALD-Oxide Semiconductor TFTs;IEEE Transactions on Electron Devices;2022-06

3. P‐2: Nitrogen Behaviors in PEALD‐Grown SiO ₂ Films Using N ₂ O Plasma Reactant and Its Application in ALD‐IZO TFTs;SID Symposium Digest of Technical Papers;2022-06

4. Nitrogen Nanobubbles in a-SiOxNy Coatings: Evaluation of Its Physical Properties and Chemical Bonding State by Spatially Resolved Electron Energy-Loss Spectroscopy;The Journal of Physical Chemistry C;2016-01-25

5. Growth of silicon oxynitride films by atmospheric pressure plasma jet;Journal of Physics D: Applied Physics;2014-03-20

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