P‐2: Nitrogen Behaviors in PEALD‐Grown SiO <sub>2</sub> Films Using N <sub>2</sub> O Plasma Reactant and Its Application in ALD‐IZO TFTs-Reference-Cited by-同舟云学术

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P‐2: Nitrogen Behaviors in PEALD‐Grown SiO ₂ Films Using N ₂ O Plasma Reactant and Its Application in ALD‐IZO TFTs

Published:2022-06 Issue:1 Volume:53 Page:1043-1046
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:Symp Digest of Tech Papers

Author:

Kim Dong-Gyu¹,Yoo Kwang Su¹,Kim Hye-Mi¹,Park Jin-Seong¹

Affiliation:

1. Division of Materials Science and Engineering Hanyang University 222 Wangsimni-ro Seongdong-gu Seoul Republic of Korea

Publisher

Wiley

Subject

General Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.15677

Reference14 articles.

1. The band edge of amorphous SiO2 by photoinjection and photoconductivity measurements

2. Dynamic microscale flow patterning using electrical modulation of zeta potential

3. Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition

4. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

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