1. Rhombohedral epitaxy of cubic SiGe on trigonal c-plane sapphire
2. A REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON;Jacoboni,1977
3. Fistul, V. I., Iglitsyn, M. I., Omelyanovskii, E. M., “Mobility of electrons in germanium strongly doped with arsenic,” Sov. Physics-Solid State 4(4), 784–785, AMER INST PHYSICS CIRCULATION FULFILLMENT DIV, 500 SUNNYSIDE BLVD, WOODBURY, NY 11797-2999 (1962).
4. Hole mobility of germanium as a function of concentration and temperature;Golikova,1962
5. Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon