Plasma etch selectivity study and material screening for self-aligned gate contact (SAGC)-Reference-Cited by-同舟云学术

Plasma etch selectivity study and material screening for self-aligned gate contact (SAGC)

Published:2019-03-20 Issue: Volume: Page:
ISSN:
Container-title:Advanced Etch Technology for Nanopatterning VIII
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Author:

Radisic Dunja,Demand Marc,Chang Shihsheng,Demuynck Steven,Kumar Kaushik A.,Metz Andrew W.,Teugels Lieve,Sun Junling,Smith Jeffrey T.,Sebaai Farid,Hopf Toby,Altamirano-Sánchez Efrain

Publisher

SPIE

Reference17 articles.

1. Self-Aligned Gate Contact;Ryckaert,2017

2. Self-aligned contacts;Trung,2000

3. Fluorocarbon based atomic layer etching of Si3N4 and etching selectivity of SiO2 over Si3N4

4. Benefits of atomic-level processing by quasi-ALE and ALD technique

5. Molecular dynamics simulation of atomic layer etching of silicon

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