Aerial imaging (AIMS) based computational lithography model calibration and mask metrology for high-NA EUV

Author:

Pandey Nitesh,Hunsche Stefan,Lyons Adam,Hennerkes Christoph,Verch Andreas,Albert Maximilian,Kersteen Grizelda,Capelli Renzo,Gillijns Werner,Baskaran Balakumar,Bekaert Joost

Publisher

SPIE

Reference11 articles.

1. Holistic lithography and metrology’s importance in driving patterning fidelity;van den Brink,2016

2. Evaluation of local CD and placement distribution on EUV mask and its impact on wafer.;Vaenkatesan,2019

3. Mask contribution to OPC model accuracy

4. Characterization and applications of an in-scanner aerial image detection system;Hunsche,2006

5. Ye, J., Cao, Y., Chen, G. and Hunsche, S., Brion Technologies Inc, 2009. Method for lithography model calibration. U.S. Patent 7,488,933.

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