GaSb-based VECSEL for high-power applications and Ho-pumping
Author:
Affiliation:
1. Fraunhofer Institute for Applied Solid States Physics (Germany)
2. LISA laser products OHG (Germany)
Publisher
SPIE
Reference10 articles.
1. 106 W continuous-wave output power from vertical-external-cavity surface-emitting laser
2. Recent Advances in Power Scaling of GaSb-Based Semiconductor Disk Lasers
3. Continuous-wave room-temperature operation of a 28 μm GaSb-based semiconductor disk laser
4. 30 W peak-power 3 ns pulse-width operation of a 2 μm electro-optically cavity-dumped VECSEL;Kaspar,2013
5. Modelocked GaSb disk laser producing 384 fs pulses at 2 [micro sign]m wavelength
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1. Single‐frequency and High Power Operation of 2–3 Micron VECSEL;Vertical External Cavity Surface Emitting Lasers;2021-09-17
2. High-Power 1770 nm Emission of a Membrane External-Cavity Surface-Emitting Laser;IEEE Journal of Quantum Electronics;2021-02
3. Membrane external-cavity surface-emitting laser emitting at 1640 nm;Optics Letters;2020-01-10
4. Progress of optically pumped GaSb based semiconductor disk laser;Opto-Electronic Advances;2018
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