Modelocked GaSb disk laser producing 384 fs pulses at 2 [micro sign]m wavelength-Reference-Cited by-同舟云学术

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Modelocked GaSb disk laser producing 384 fs pulses at 2 [micro sign]m wavelength

Published:2011 Issue:7 Volume:47 Page:454
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Härkönen A.,Grebing C.,Paajaste J.,Koskinen R.,Alanko J.-P.,Suomalainen S.,Steinmeyer G.,Guina M.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el.2011.0253?crawler=true&mimetype=application/pdf

Reference8 articles.

1. High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams

2. Passively modelocked 832 nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3 ps pulses at 1.9 GHz repetition rate

3. Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power

4. Passively modelocked GaInNAs VECSEL at centre wavelength around 1.3 [micro sign]m

5. Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber

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1. High-power, gigahertz repetition frequency self-mode-locked Ho:GdVO₄ laser resonantly pumped by a Tm-doped fiber laser;Optics Letters;2024-04-10

2. Gigahertz semiconductor laser at a center wavelength of 2 µm in single and dual-comb operation;Optics Express;2023-12-18

3. Self−Mode−Locked 2−μm GaSb−Based Optically Pumped Semiconductor Disk Laser;Applied Sciences;2023-06-06

4. Modelocked InGaSb-MIXSEL at 2.04 µm;CLEO 2023;2023

5. Bandgap engineering, monolithic growth, and operation parameters of GaSb-based SESAMs in the 2–2.4 µm range;Optical Materials Express;2022-06-01

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