Passively modelocked GaInNAs VECSEL at centre wavelength around 1.3 [micro sign]m-Reference-Cited by-同舟云学术

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Passively modelocked GaInNAs VECSEL at centre wavelength around 1.3 [micro sign]m

Published:2006 Issue:16 Volume:42 Page:926
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Rutz A.,Liverini V.,Maas D.J.H.C.,Rudin B.,Bellancourt A.-R.,Schön S.,Keller U.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20061793?crawler=true&mimetype=application/pdf

Reference10 articles.

1. Passively mode-locked diode-pumped surface-emitting semiconductor laser

2. Passively modelocked surface-emitting semiconductor lasers

3. GaInNAs: a novel material for long-wavelength semiconductor lasers

4. Annealing in GaInNAs system

5. 0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 [micro sign]m

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3. 134 μm VECSEL mode-locked with a GaSb-based SESAM;Optics Letters;2018-07-11

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