Electron Beam Lithography And Resist Processing For The Fabrication Of T-Gate Structures
Author:
Affiliation:
1. Cornell University (United States)
Publisher
SPIE
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Trilayer process for T-gate and Γ-gate lithography using ternary developer and proximity effect correction superposition;Journal of Vacuum Science & Technology B;2022-12
2. Nanofabrications of T shape gates for high electron mobility transistors in microwaves and THz waves, a review;Micro and Nano Engineering;2021-11
3. Electron Beam Lithography of Nanostructures;Reference Module in Materials Science and Materials Engineering;2016
4. Electron Beam Lithography of Nanostructures;Comprehensive Nanoscience and Technology;2011
5. Recursive least squares constant modulus algorithm based on the QR decomposition;2008 International Conference on Neural Networks and Signal Processing;2008-06
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