EUV lithography for 22nm half pitch and beyond: exploring resolution, LWR, and sensitivity tradeoffs-Reference-Cited by-同舟云学术

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EUV lithography for 22nm half pitch and beyond: exploring resolution, LWR, and sensitivity tradeoffs

Published:2011-03-17 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Putna E. Steve,Younkin Todd R.,Leeson Michael,Caudillo Roman,Bacuita Terence,Shah Uday,Chandhok Manish

Publisher

SPIE

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel Etch-Resistant Molecular Glass Photoresist Based on Pyrene Derivatives for Electron Beam Lithography;ACS Omega;2024-08-27

2. A way to improve the uniformity of nanometer-thickness graphite film synthesized on polycrystalline Ni substrate: From large grain to small grain;Carbon;2019-04

3. Sensitivity enhancement of chemically amplified resists and performance study using extreme ultraviolet interference lithography;Journal of Micro/Nanolithography, MEMS, and MOEMS;2016-07-15

4. Tip-based nanolithography methods and materials;Materials and Processes for Next Generation Lithography;2016

5. Toward 10 nm half-pitch in extreme ultraviolet lithography: results on resist screening and pattern collapse mitigation techniques;Journal of Micro/Nanolithography, MEMS, and MOEMS;2015-08-07

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