Investigation of alternate mask absorbers in EUV lithography
Author:
Affiliation:
1. IBM Research (United States)
Publisher
SPIE
Reference11 articles.
1. Ultimate 2d resolution printing with negative tone development;Burkhardt,2016
2. Mitigation of mask three-dimensional induced phase effects by absorber optimization in ArFiand extreme ultraviolet lithography
3. Mask-induced best-focus shifts in deep ultraviolet and extreme ultraviolet lithography
4. Mitigation of image contrast loss due to mask-side non-telecentricity in an EUV scanner;Shih,2015
5. Best focus shift mechanism for thick masks;Burkhardt,2015
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1. Optimizing extreme ultraviolet lithography imaging metrics as a function of absorber thickness and illumination source: a simulation case study of Ta-Co alloy;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-08-07
2. Evaluation of Ta-Co alloys as novel high-k extreme ultraviolet mask absorber;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-06-21
3. Evaluation of Lines and Spaces printing and general understanding of imaging with dark field low-n mask;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-04-17
4. Extend 0.33 NA extreme ultraviolet single patterning to pitch 28-nm metal design by low-n mask;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-11-25
5. Optimizing EUV imaging metrics as a function of absorber thickness and illumination source: simulation case study of Ta-Co alloy;37th European Mask and Lithography Conference;2022-11-01
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