Molecular beam epitaxy growth of high quality InAs/GaSb type-II superlattices for long wavelength infrared detection
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SPIE
Reference11 articles.
1. Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb
2. Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K
3. Graded band gap for dark-current suppression in long-wave infrared W-structured type-II superlattice photodiodes
4. W-structured type-II superlattice long-wave infrared photodiodes with high quantum efficiency
5. nBn structure based on InAs∕GaSb type-II strained layer superlattices
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