Dependence of noise temperature on physical temperature for cryogenic low-noise amplifiers-Reference-Cited by-同舟云学术

Dependence of noise temperature on physical temperature for cryogenic low-noise amplifiers

Published:2017-03-15 Issue:1 Volume:3 Page:014003
ISSN:2329-4124
Container-title:Journal of Astronomical Telescopes, Instruments, and Systems
language:en
Short-container-title:J. Astron. Telesc. Instrum. Syst

Author:

McCulloch Mark A.¹,Grahn Jan²,Melhuish Simon J.¹,Nilsson Per-Ake²,Piccirillo Lucio¹,Schleeh Joel³,Wadefalk Niklas³

Affiliation:

1. University of Manchester, Jodrell Bank Centre for Astrophysics, School of Physics and Astronomy, Manchester, United Kingdom

2. Chalmers University of Technology, Department of Microtechnology and Nanoscience, Göteborg, Sweden

3. Low Noise Factory, Göteborg, Sweden

Publisher

SPIE-Intl Soc Optical Eng

Subject

Space and Planetary Science,Mechanical Engineering,Astronomy and Astrophysics,Instrumentation,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Drain Temperature Dependence on Ambient Temperature for a Cryogenic Low Noise C-Band Amplifier

2. FETs and HEMTs at cryogenic temperatures-their properties and use in low-noise amplifiers

3. 32-GHz cryogenically cooled HEMT low-noise amplifiers

4. Very low noise and low power operation of cryogenic AlInAs/GaInAs/InP HFET's

5. Ultra-Low-Noise 1.2- to 1.7-GHz Cooled GaAsFET Amplifiers

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