CDSEM AFM hybrid metrology for the characterization of gate-all-around silicon nano wires-Reference-Cited by-同舟云学术

CDSEM AFM hybrid metrology for the characterization of gate-all-around silicon nano wires

Published:2014-04-02 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Metrology, Inspection, and Process Control for Microlithography XXVIII
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Author:

Levi Shimon,Schwarzband Ishai,Weinberg Yakov,Cornell Roger,Adan Ofer,Cohen Guy M.,Gignac Lynne,Bangsaruntip Sarunya,Hand Sean,Osborne Jason,Feinstein Adam

Publisher

SPIE

Reference5 articles.

1. Buckling characterization of gate all around silicon nanowires (SPIE 8681 2013)

2. S. Bangsaruntip et al., Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm, VLSI Technology (VLSIT), 2010 Symposium

3. Buckling theory: Gere, Mechanics of Materials, 6th Ed., chapter 11, Thomson, 2004

4. Introduction to Bruker’s ScanAsyst and PeakForce Tapping AFM Technology;Kaemmer,2011

5. Characteristics of CD accuracy;Banke,1999

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