Device level 3D characterization using PeakForce AFM-Reference-Cited by-同舟云学术

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Device level 3D characterization using PeakForce AFM

Published:2016-03-18 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Timoney Padraig¹,Zhang Xiaoxiao¹,Vaid Alok¹,Hand Sean²,Osborne Jason²,Milligan Eric²,Feinstein Adam²

Affiliation:

1. GLOBALFOUNDRIES Inc. (United States)

2. Bruker Inc. (United States)

Publisher

SPIE

Reference5 articles.

1. Tactical and strategic metrology perspectives for advanced integrated circuit development and manufacturing;Vaid,2015

2. Solving next generation (1x node) metrology challenges using advanced CDSEM capabilities: tilt, high energy and backscatter imaging;Zhang,2015

3. Critical Metrology for Advanced CMOS Manufacturing;Ma,2013

4. CDSEM AFM hybrid metrology for the characterization of gate-all-around silicon nano wires;Levi,2014

5. High-speed atomic force microscopy for patterned defect review;Jason,2013

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of nanosheet metrology opportunities for technology readiness;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-04-18

2. AFM characterization for Gate-All-Around (GAA) devices;Metrology, Inspection, and Process Control for Microlithography XXXIV;2020-04-02

3. Line top loss and line top roughness characterizations of EUV resists;Metrology, Inspection, and Process Control for Microlithography XXXIV;2020-03-20

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