Anti-reflective sub-wavelength structures at a wavelength of 441.6 nm for phase masks of near-field lithography-Reference-Cited by-同舟云学术

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Anti-reflective sub-wavelength structures at a wavelength of 441.6 nm for phase masks of near-field lithography

Published:2016-10-31 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Li Jinyu¹,Chen Huoyao¹,Kroker Stefanie²,Käsebier Thomas²,Liu Zhengkun¹,Qiu Keqiang¹,Liu Ying¹,Kley Ernst-Bernhard²,Xu Xiangdong¹,Hong Yilin¹,Fu Shaojun¹

Affiliation:

1. Univ. of Science and Technology of China (China)

2. Friedrich-Schiller-Univ. Jena (Germany)

Publisher

SPIE

Reference7 articles.

1. Subwavelength resist patterning using interference exposure with a deep ultraviolet grating mask: Bragg angle incidence versus normal incidence

2. E-beam lithography and optical near field lithography:new prospects in fabrication of various grating structures;Kley,2013

3. Yuanfang Li, Huoyao Chen and Stefanie Kroker, “Subwavelength resist patterning using interference exposure with a deep ultraviolet grating mask: Bragg angle incidence versus normal incidence,” Chinese Optics Letters.

4. Characteristic analysis of anti-reflective subwavelength cross gratings fabricated with holographic technique;Zhao,2016

5. Nanostructured encapsulation coverglasses with wide-angle broadband antireflection and self-cleaning properties for III–V multi-junction solar cell applications

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