Engineering future light emitting diodes and photovoltaics with inexpensive materials:Integrating ZnO and Si into GaN-based devices-Reference-Cited by-同舟云学术

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Engineering future light emitting diodes and photovoltaics with inexpensive materials:Integrating ZnO and Si into GaN-based devices

Published:2013-03-18 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Oxide-based Materials and Devices IV
language:
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Author:

Bayram C.,Shiu K. T.,Zhu Y.,Cheng C. W.,Sadana D. K.,Teherani F. H.,Rogers D. J.,Sandana V. E.,Bove P.,Zhang Y.,Gautier S.,Cho C.-Y.,Cicek E.,Vashaei Z.,McClintock R.,Razeghi M.

Publisher

SPIE

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanostructured ZnO‐CQD Hybrid Heterostructure Nanocomposites: Synergistic Engineering for Sustainable Design, Functional Properties, and High‐Performance Applications;ChemNanoMat;2024-06-18

2. Identification of Elastoplastic Constitutive Model of GaN Thin Films Using Instrumented Nanoindentation and Machine Learning Technique;Coatings;2024-05-31

3. Selective area growth of high quality GaN nanocolumns on Si(0 0 1) by plasma assisted molecular beam epitaxy;Journal of Crystal Growth;2023-12

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