Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology-Reference-Cited by-同舟云学术

Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology

Published:2015-03-13 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Marcon Denis,Van Hove Marleen,De Jaeger Brice,Posthuma Niels,Wellekens Dirk,You Shuzhen,Kang Xuanwu,Wu Tian-Li,Willems Maarten,Stoffels Steve,Decoutere Stefaan

Publisher

SPIE

Reference14 articles.

1. Manufacturing Challenges of GaN-on-Si HEMTs in a 200 mm CMOS Fab

2. High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-${\rm SiN}_{x}$/RF-Sputtered-${\rm HfO}_{2}$

3. Corrion AL, Chen M, Chu R et al., Normally-off gate-recessed AlGaN/GaN-on-Si hybrid MOS-HFET with Al2O3 gate dielectric. In: Proc. device research conf. 2011. p. 213-;214.

4. Chu Rongming, Corrion A, Chen M et al., 1200 V Normally-off GaN-on-Si field effect transistors with low dynamic on-resistance. IEEE Electron Dev Lett 2011;32(5):632–4.

5. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

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