Benchmarking study of EUV resists for NXE:3300B

Author:

Fan Yu-Jen1,Mellish Mac1,Chun Jun Sung1,McWilliams Scott1,Montgomery Cecilia1,Montgomery Warren1

Affiliation:

1. SUNY Polytechnic Institute (United States)

Publisher

SPIE

Reference25 articles.

1. First results of outgas resist family test and correlation between outgas specifications and EUV resist development

2. Enabling robust EUV lithography for NXE:3300 applications,;Chun,2013

3. SEMATECH's cycles of learning test for EUV photoresist and its applications for process improvement,;Chun,2014

4. Evaluation of novel processing approaches to improve extreme ultraviolet (EUV) photoresist pattern quality,;Montgomery,2015

5. The patterning center of excellence (CoE): an evolving lithographic enablement model,;Montgomery,2015

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. One metric to rule them all: new k4 definition for photoresist characterization;Extreme Ultraviolet (EUV) Lithography XI;2020-04-14

2. Reducing roughness in extreme ultraviolet lithography;Journal of Micro/Nanolithography, MEMS, and MOEMS;2018-08-07

3. Reducing roughness in extreme ultraviolet lithography;International Conference on Extreme Ultraviolet Lithography 2017;2017-10-16

4. Relationship between sensitizer concentration and resist performance of chemically amplified extreme ultraviolet resists in sub-10 nm half-pitch resolution region;Japanese Journal of Applied Physics;2016-11-25

5. Overview of materials and processes for lithography;Materials and Processes for Next Generation Lithography;2016

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